The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
HY1115D
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS Drain-Source Voltage VGSS Gate-Source Voltage
TJ Maximum Junction Temperature TSTG Storage Temperature Range
IS Diode Continuous Forward Current Mounted on Large Heat Sink
TC=25°C
IDM Pulsed Drain Current * ID Continuous Drain Current PD Maximum Power Dissipation
TC=25°C TC=25°C TC=100°C TC=25°C Tc=100°C
RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient EAS Drain-Source Avalanche Energy
L=0.5mH
Note * Repetitive rating ; pulse width limiited by junction temperature ** Drain current is limited by junction temperature *** VD=100V
Rating
150 ±20 150 -55 to 150 10
40** 10 7 50 20 2.