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HY1203S Datasheet N-channel Enhancement Mode MOSFET

Manufacturer: HOOYI

Overview: HY1203S Feature  30V/12A RDS(ON) = 7.5 mΩ(typ.)@VGS = 10V RDS(ON) = 9.0 mΩ(typ.)@VGS = 4.

Datasheet Details

Part number HY1203S
Manufacturer HOOYI
File Size 445.21 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet HY1203S-HOOYI.pdf

General Description

DD DD S S S G SOP-8 Applications  Power Management in DC/DC Converter  Switching application N-Channel MOSFET Ordering and Marking Information S HY1203 YYXXXJWW G Package Code S: SOP-8L Date Code YYXXX WW Assembly Material G: lead Free Device Note: HOOYI lead-free products contain molding pounds/die attach materials and 100% matte tin plate Termination finish;which are fully pliant with RoHS.HOOYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.HOOYI defines “Green” to mean lead-free (RoHS pliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).

HOOYI reserves the right to make changes to improve reliability or manufacturability without notice,and Advise customers to obtain the latest version of relevant information to verify before placing orders.

.hooyi.cc 1 160523 HY1203S Absolute Maximum Ratings Symbol Parameter mon Ratings (Tc=25°C Unless Otherwis Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperture TSTG Storage Temperture Range IS Drain Current-Continuous Tc=25°C Mounted on Large Heat Sink IDM Pulsed Drain Current * Tc=25°C ID Continuous Drain Current Tc=25°C Tc=70°C PD Maximum Power Dissipation Tc=25°C Tc=70°C RJC Thermal Resistance, Junction-to-Case RJA Thermal Resistance, Junction-to-Ambient ** EAS SinglePulsed-Avalanche Energy *** L=0.3mH Note: * ** *** Repetitive rating;pulse width limited by max.junction temperature.

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