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HY1203S - N-Channel Enhancement Mode MOSFET

General Description

DD DD S S S G SOP-8 Applications Power Management in DC/DC Converter Switching application N-Channel MOSFET Ordering and Marking Information S HY1203 YYXXXJWW G Package Code S: SOP-8L Date Code YYXXX WW Assembly Material G: lead Free Device Note: HOOYI lead-free products contain mo

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Datasheet Details

Part number HY1203S
Manufacturer HOOYI
File Size 445.21 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HY1203S Datasheet

Full PDF Text Transcription (Reference)

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HY1203S Feature  30V/12A RDS(ON) = 7.5 mΩ(typ.)@VGS = 10V RDS(ON) = 9.0 mΩ(typ.)@VGS = 4.5V  Avalanche Rated  Reliable and Rugged  Lead Free Devices Available N-Channel Enhancement Mode MOSFET Pin Description DD DD S S S G SOP-8 Applications  Power Management in DC/DC Converter  Switching application N-Channel MOSFET Ordering and Marking Information S HY1203 YYXXXJWW G Package Code S: SOP-8L Date Code YYXXX WW Assembly Material G: lead Free Device Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate Termination finish;which are fully compliant with RoHS.HOOYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.