Datasheet4U Logo Datasheet4U.com

HY1320P - N-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the HY1320P, a member of the HY1320 N-Channel Enhancement Mode MOSFET family.

Datasheet Summary

Description

DS G TO-220FB-3L DS G TO-263-2L Applications Switching application

Power Management for Inverter Systems.

Features

  • 200V/30 A RDS(ON) = 63 mΩ (typ. ) @ VGS=10V.
  • 100% avalanche tested.
  • Reliable and Rugged.
  • Lead Free and Green Devices Available (RoHS Compliant) Pin.

📥 Download Datasheet

Datasheet preview – HY1320P

Datasheet Details

Part number HY1320P
Manufacturer HOOYI
File Size 4.27 MB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HY1320P Datasheet
Additional preview pages of the HY1320P datasheet.

📁 Similar Datasheet

  • HY1303C - N-Channel MOSFET (HUAYI)
  • HY13P52 - 8-Bit RISC-like Mixed Signal Microcontroller (HYCON)
  • HY13P53 - 8-Bit RISC-like Mixed Signal Microcontroller (HYCON)
  • HY13P53B - 8-Bit RISC-like Mixed Signal Microcontroller (HYCON)
  • HY13P56B - 8-Bit RISC-like Mixed Signal Microcontroller (HYCON)
  • HY1-xxV - (HY Relays) Non-polarized 1 form C relay (NAIS)
  • HY10-P - Current Transducers HY 5 to 25-P (LEM)
  • HY1001B - N-Channel Enhancement Mode MOSFET (HUAYI)
  • HY10P40 - 8-Bit Microcontroller (HYCON)
  • HY1103S - N-Channel MOSFET (HUAYI)
Other Datasheets by HOOYI
  • HY1320 - N-Channel Enhancement Mode MOSFET
  • HY1320B - N-Channel Enhancement Mode MOSFET
  • HY1001D - N-Channel Enhancement Mode MOSFET
  • HY1001M - N-Channel Enhancement Mode MOSFET
  • HY1001P - N-Channel Enhancement Mode MOSFET
  • HY1001U - N-Channel Enhancement Mode MOSFET
  • HY1001V - N-Channel Enhancement Mode MOSFET
  • HY1115D - N-Channel Enhancement Mode MOSFET

Full PDF Text Transcription

Click to expand full text
HY1320P/B N-Channel Enhancement Mode MOSFET Features • 200V/30 A RDS(ON) = 63 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Pin Description DS G TO-220FB-3L DS G TO-263-2L Applications • Switching application • Power Management for Inverter Systems. D G N-Channel MOSFET Ordering and Marking Information S PB HY1320 HY1320 YYÿ XXXJWW G YYÿ XXXJWW G Package Code P:TO-220FB-3L Date Code YYXXX WW B:TO-263-2L Assembly Material G : Lead Free Device Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS.
Published: |