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HY1808W - N-Channel MOSFET

Description

G D S TO-220 G D S D TO-247 G Ordering and Marking Information S N-Channel MOSFET P HY1808 YYÿ XXXJWW G W HY1808 YYÿÿ XXXJWW G Package Code P : TO220-3L W : TO247-3L Date Code YYXXX WW Assembly Material G : Lead Free Device Note: HOOYI lead-free products contain molding compounds/die

Features

  • 75V/85A, RDS(ON)= 8 m Ω (typ. ) @ VGS=10V.
  • Avalanche Rated.
  • Reliable and Rugged.
  • Lead Free and Green Devices Available (RoHS Compliant).

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Datasheet preview – HY1808W

Datasheet Details

Part number HY1808W
Manufacturer HOOYI
File Size 1.01 MB
Description N-Channel MOSFET
Datasheet download datasheet HY1808W Datasheet
Additional preview pages of the HY1808W datasheet.

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Full PDF Text Transcription

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HY1808P/W N-Channel Enhancement Mode MOSFET Features • 75V/85A, RDS(ON)= 8 m Ω (typ.) @ VGS=10V • Avalanche Rated • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Applications • Power Management for Inverter Systems. Pin Description G D S TO-220 G D S D TO-247 G Ordering and Marking Information S N-Channel MOSFET P HY1808 YYÿ XXXJWW G W HY1808 YYÿÿ XXXJWW G Package Code P : TO220-3L W : TO247-3L Date Code YYXXX WW Assembly Material G : Lead Free Device Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS.
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