Huayi Microelectronics HY1908PM
N-Channel Enhancement Mode MOSFET
| Part No. | HY1908PM |
|---|---|
| Datasheet | HY1908PM Download |
| Manufacturer |  Huayi Microelectronics |
| Description | N-Channel Enhancement Mode MOSFET |
| Buy | Stock & Price |
FEATURES
● 80V/90A, RDS(ON)= 7.0mΩ (typ.) @ VGS=10V● Avalanche Rated
● Reliable and Rugged
● Lead Free and Green Devices Available (RoHS Compliant) Pin
DESCRIPTION
DS G TO-220FB-3L DS G TO-220FB-3S DS G TO-263-2LAPPLICATIONS
● Power Management for Inverter Systems. DS G TO-3PS-3L DS G TO-3PS-3M D DS G TO-220MF-3L G N-Channel MOSFET Ordering and Marking Information S P HY1908 YYÿ XXXJWW G PS HY1908 YYÿ XXXJWW G M HY1908 YYÿ XXXJWW G PM HY1908 YYÿ XXXJWW G B HY1908 YYÿ XXXJWW G MF HY1908 YYÿ XXXJWW G Package Code P : TO-220FB-3L B: TO-263-2L PM: TO-3PS-3M M : TO-220FB-3S PS: TO-3PS-3L MF: TO-220MF-3L Date Code YYXXX WW Assembly Material G : Lead Free Device Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. HOOYI lead-free products meet or exceed the lead-free requirements of IPC/JEDE
