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HY1908P - N-Channel Enhancement Mode MOSFET

General Description

DS G TO-220FB-3L DS G TO-220FB-3S DS G TO-263-2L Applications

Power Management for Inverter Systems.

Key Features

  • 80V/90A, RDS(ON)= 7.0mΩ (typ. ) @ VGS=10V.
  • Avalanche Rated.
  • Reliable and Rugged.
  • Lead Free and Green Devices Available (RoHS Compliant) Pin.

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Datasheet Details

Part number HY1908P
Manufacturer HOOYI
File Size 3.99 MB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HY1908P Datasheet

Full PDF Text Transcription for HY1908P (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HY1908P. For precise diagrams, and layout, please refer to the original PDF.

HY1908P/M/B/PS/PM/MF N-Channel Enhancement Mode MOSFET Features • 80V/90A, RDS(ON)= 7.0mΩ (typ.) @ VGS=10V • Avalanche Rated • Reliable and Rugged • Lead Free and Green D...

View more extracted text
GS=10V • Avalanche Rated • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Pin Description DS G TO-220FB-3L DS G TO-220FB-3S DS G TO-263-2L Applications • Power Management for Inverter Systems.

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