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HY1908D - N-Channel Enhancement Mode MOSFET

General Description

S D G TO-252-2L S D G TO-251-3L S D G TO-251-3L Applications

Power Management for Inverter Systems.

Key Features

  • 80V/90A, RDS(ON)=7.8 mΩ (typ. ) @ V =10V GS.
  • Avalanche Rated.
  • Reliable and Rugged.
  • Lead Free and Green Devices Available (RoHS Compliant) Pin.

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Datasheet Details

Part number HY1908D
Manufacturer HOOYI
File Size 629.70 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HY1908D Datasheet

Full PDF Text Transcription for HY1908D (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HY1908D. For precise diagrams, and layout, please refer to the original PDF.

HY1908D/U/S N-Channel Enhancement Mode MOSFET Features • 80V/90A, RDS(ON)=7.8 mΩ (typ.) @ V =10V GS • Avalanche Rated • Reliable and Rugged • Lead Free and Green Devices ...

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• Avalanche Rated • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Pin Description S D G TO-252-2L S D G TO-251-3L S D G TO-251-3L Applications • Power Management for Inverter Systems. D G N-Channel MOSFET Ordering and Marking Information S DUS HY1908 HY1908 HY1908 YYÿ XXXJWW G YYÿ XXXJWW G YYÿ XXXJWW G Package Code D : TO-252-2L S : TO-251-3L Date Code YYXXX WW U : TO-251-3L Assembly Material G : Lead Free Device Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS.

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