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HY1908U Datasheet PDF

Huayi Microelectronics HY1908U

N-Channel Enhancement Mode MOSFET

Part No. HY1908U
Datasheet HY1908U Download
Manufacturer
Huayi Microelectronics
Description N-Channel Enhancement Mode MOSFET
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HY1908U datasheet page 1 preview

FEATURES

● 80V/90A, RDS(ON)=7.8 mΩ (typ.) @ V =10V GS
● Avalanche Rated
● Reliable and Rugged
● Lead Free and Green Devices Available (RoHS Compliant) Pin

DESCRIPTION

S D G TO-252-2L S D G TO-251-3L S D G TO-251-3L

APPLICATIONS

● Power Management for Inverter Systems. D G N-Channel MOSFET Ordering and Marking Information S DUS HY1908 HY1908 HY1908 YYÿ XXXJWW G YYÿ XXXJWW G YYÿ XXXJWW G Package Code D : TO-252-2L S : TO-251-3L Date Code YYXXX WW U : TO-251-3L Assembly Material G : Lead Free Device Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. HOOYI lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. HOOYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed
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