P-Channel Enhancement Mode MOSFET Pin Description
z -30V/-90A RDS(ON)= 4.7mΩ(typ.)@VGS =-10V RDS(ON)= 6.5mΩ(typ.)@VGS =-4.5V
z 100% avalanche tested z Reliable and Rugged z Lead Free and Green Devices Available
(RoHS Compliant)
GDS TO-220FB-3L
GDS TO-263-2L
Applications
z Switching Application
Full PDF Text Transcription for HY19P03P (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
HY19P03P. For precise diagrams, and layout, please refer to the original PDF.
HY19P03P/B Feature Description P-Channel Enhancement Mode MOSFET Pin Description z -30V/-90A RDS(ON)= 4.7mΩ(typ.)@VGS =-10V RDS(ON)= 6.5mΩ(typ.)@VGS =-4.5V z 100% avalanc...
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= 4.7mΩ(typ.)@VGS =-10V RDS(ON)= 6.5mΩ(typ.)@VGS =-4.5V z 100% avalanche tested z Reliable and Rugged z Lead Free and Green Devices Available (RoHS Compliant) GDS TO-220FB-3L GDS TO-263-2L Applications z Switching Application z Power Management for DC/DC Ordering and Marking Information P HY19P03 YYXXXJWW G B HY19P03 YYXXXJWW G P-Channel MOSFET Package Code P: TO-220FB-3L B: TO-263-2L Date Code YYXXX WW Assembly Material G:lead Free Device Note: H8$<, lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS.
HY19P03P Datasheet
