HY19P03P Datasheet | HOOYI

HY19P03P/B Feature Description P-Channel Enhancement Mode MOSFET Pin Description z -30V/-90A RDS(ON)= 4.7mΩ(typ.)@VGS =-10V RDS(ON)= 6.5mΩ(typ.)@VGS =-4.5V z 100% avalanche tested z Reliable and Rugged z Lead Free and Green Devices Available (RoHS pliant) GDS TO-220FB-3L GDS TO-263-2L Applications z Switching Application z Power Management for DC/DC Ordering and Marking Information HY19P03 YYXXXJWW G HY19P03 YYXXXJWW G P-Channel MOSFET Package Code P: TO-220FB-3L B: TO-263-2L Date Code YYXXX WW Assembly Material G:lead Free Device Note: H8$<, lead-free products contain molding pounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully...