| Part number | HY19P03P |
|---|---|
| Datasheet | HY19P03P-HOOYI.pdf |
| File Size | 745.91 KB |
| Manufacturer | HOOYI |
| Description | P-Channel Enhancement Mode MOSFET |
|
|
TO-263-2L Date Code YYXXX WW Assembly Material G:lead Free Device Note: H8$<, lead-free products contain molding pounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully pliant with RoHS. +8$<, lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.
| Part Number | Description |
|---|---|
| HY19P03 | P-Channel MOSFET |
| HY19P03B | P-Channel Enhancement Mode MOSFET |
| HY19P03D | P-Channel MOSFET |
| HY19P03U | P-Channel MOSFET |
| HY19P03V | P-Channel MOSFET |
| HY1904C2 | Single N-Channel Enhancement Mode MOSFET |
| HY1904D | N-Channel Enhancement Mode MOSFET |
| HY1904U | N-Channel Enhancement Mode MOSFET |
| HY1904V | N-Channel Enhancement Mode MOSFET |
| HY1906B | N-Channel Enhancement Mode MOSFET |
