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HY3210B - N-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the HY3210B, a member of the HY3210P N-Channel Enhancement Mode MOSFET family.

Datasheet Summary

Description

DS G TO-220FB-3L DS G TO-220FB-3M DS G TO-263-2L Applications Switching application

Power Management for Inverter Systems.

Features

  • 100V/120A RDS(ON) = 6.8 mΩ (typ. ) @ VGS=10V.
  • 100% avalanche tested.
  • Reliable and Rugged.
  • Lead Free and Green Devices Available (RoHS Compliant) N-Channel Enhancement Mode MOSFET Pin.

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Datasheet preview – HY3210B

Datasheet Details

Part number HY3210B
Manufacturer HOOYI
File Size 4.61 MB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HY3210B Datasheet
Additional preview pages of the HY3210B datasheet.

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Full PDF Text Transcription

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HY3210P/M/B/PS/PM Features • 100V/120A RDS(ON) = 6.8 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) N-Channel Enhancement Mode MOSFET Pin Description DS G TO-220FB-3L DS G TO-220FB-3M DS G TO-263-2L Applications • Switching application • Power Management for Inverter Systems.
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