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HY3210B - N-Channel Enhancement Mode MOSFET

Download the HY3210B datasheet PDF. This datasheet also covers the HY3210P variant, as both devices belong to the same n-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

DS G TO-220FB-3L DS G TO-220FB-3M DS G TO-263-2L Applications Switching application

Power Management for Inverter Systems.

Key Features

  • 100V/120A RDS(ON) = 6.8 mΩ (typ. ) @ VGS=10V.
  • 100% avalanche tested.
  • Reliable and Rugged.
  • Lead Free and Green Devices Available (RoHS Compliant) N-Channel Enhancement Mode MOSFET Pin.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HY3210P-HOOYI.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HY3210B
Manufacturer HOOYI
File Size 4.61 MB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HY3210B Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HY3210P/M/B/PS/PM Features • 100V/120A RDS(ON) = 6.8 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) N-Channel Enhancement Mode MOSFET Pin Description DS G TO-220FB-3L DS G TO-220FB-3M DS G TO-263-2L Applications • Switching application • Power Management for Inverter Systems.