HY3210P - N-Channel Enhancement Mode MOSFET

Datasheet Summary

Description

DS G TO-220FB-3L DS G TO-220FB-3M DS G TO-263-2L Applications Switching application

Power Management for Inverter Systems.

Features

100V/120A RDS(ON) = 6.8 mΩ (typ. ) @ VGS=10V.
100% avalanche tested.
Reliable and Rugged.
Lead Free and Green Devices Available (RoHS Compliant) N-Channel Enhancement Mode MOSFET Pin.

HOOYI

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Datasheet Details

Part number	HY3210P
Manufacturer	HOOYI
File Size	4.61 MB
Description	N-Channel Enhancement Mode MOSFET
Datasheet	HY3210P Datasheet
Additional preview pages of the HY3210P datasheet.

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Full PDF Text Transcription

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HY3210P/M/B/PS/PM Features • 100V/120A RDS(ON) = 6.8 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) N-Channel Enhancement Mode MOSFET Pin Description DS G TO-220FB-3L DS G TO-220FB-3M DS G TO-263-2L Applications • Switching application • Power Management for Inverter Systems.

Published: Jun 22, 2016 |