HY3210P - N-Channel Enhancement Mode MOSFET

HOOYI

General Description

DS G TO-220FB-3L DS G TO-220FB-3M DS G TO-263-2L Applications Switching application

Power Management for Inverter Systems.

Key Features

100V/120A RDS(ON) = 6.8 mΩ (typ. ) @ VGS=10V.
100% avalanche tested.
Reliable and Rugged.
Lead Free and Green Devices Available (RoHS Compliant) N-Channel Enhancement Mode MOSFET Pin.

📥 Download Datasheet

HY3210P n-channel enhancement mode mosfet by HOOYI - Datasheet Preview

Datasheet Details

Part number	HY3210P
Manufacturer	HOOYI
File Size	4.61 MB
Description	N-Channel Enhancement Mode MOSFET
Datasheet	HY3210P Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
HY3210B	N-Channel 100V MOSFET	VBsemi
HY3210NA2B	N-Channel Enhancement Mode MOSFET	HUAYI
HY3210NA2P	N-Channel Enhancement Mode MOSFET	HUAYI
HY3003D	N-Channel Enhancement Mode MOSFET	HUAYI
HY3003U	N-Channel Enhancement Mode MOSFET	HUAYI

Other Datasheets by HOOYI

Part Number	Description
HY3210PM	N-Channel Enhancement Mode MOSFET
HY3210PS	N-Channel Enhancement Mode MOSFET
HY3210B	N-Channel Enhancement Mode MOSFET
HY3210M	N-Channel Enhancement Mode MOSFET
HY3215	N-Channel Enhancement Mode MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

HY3210P/M/B/PS/PM Features • 100V/120A RDS(ON) = 6.8 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) N-Channel Enhancement Mode MOSFET Pin Description DS G TO-220FB-3L DS G TO-220FB-3M DS G TO-263-2L Applications • Switching application • Power Management for Inverter Systems.