HY3210P
Features
- 100V/120A
RDS(ON) = 6.8 mΩ (typ.) @ VGS=10V
- 100% avalanche tested
- Reliable and Rugged
- Lead Free and Green Devices Available
(Ro HS pliant)
N-Channel Enhancement Mode MOSFET
Pin Description
DS G TO-220FB-3L
DS G TO-220FB-3M
DS G TO-263-2L
Applications
- Switching application
- Power Management for Inverter Systems.
DS G TO-3PS-3L
DS G TO-3PS-3M
G N-Channel MOSFET
Ordering and Marking Information
P HY3210
YYÿ XXXJWW G
PS HY3210
YYÿ XXXJWW G
M HY3210
YYÿ XXXJWW G
PM HY3210
YYÿ XXXJWW G
B HY3210
YYÿ XXXJWW G
Package Code
P : TO-220FB-3L B: TO-263-2L PM: TO-3PS-3M
M : TO-220FB-3M PS: TO-3PS-3L
Date Code YYXXX WW
Assembly Material G : Lead Free Device
Note: HOOYI lead-free products contain molding pounds/die attach materials and 100% matte tin plate termination finish; which are fully pliant with Ro HS. HOOYI lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature....
