Download the HY3306B datasheet PDF.
This datasheet also covers the HY3306P variant, as both devices belong to the same n-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.
General Description
DS G TO-220FB-3L
DS G TO-263-2L
Applications
Switching application
Power Management for Inverter Systems.
Key Features
60V/130A
RDS(ON) = 5.4 mΩ (typ. ) @ VGS=10V.
100% avalanche tested.
Reliable and Rugged.
Lead Free and Green Devices Available
(RoHS Compliant)
Pin.
Full PDF Text Transcription for HY3306B (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
HY3306B. For precise diagrams, and layout, please refer to the original PDF.
HY3306P/B N-Channel Enhancement Mode MOSFET Features • 60V/130A RDS(ON) = 5.4 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devi...
View more extracted text
100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Pin Description DS G TO-220FB-3L DS G TO-263-2L Applications • Switching application • Power Management for Inverter Systems. D G N-Channel MOSFET Ordering and Marking Information S PB HY3306 HY3306 YYÿ XXXJWW G YYÿ XXXJWW G Package Code P : TO-220FB-3L Date Code YYXXX WW B: TO-263-2L Assembly Material G : Lead Free Device Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS.
HY3306B Datasheet
