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HY3306P - N-Channel Enhancement Mode MOSFET

Product Overview

HOOYI

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HY3306P N-Channel Enhancement Mode MOSFET by HOOYI - Datasheet Preview — Datasheet preview – HY3306P

Datasheet Details

Part number	HY3306P
Manufacturer	HOOYI
File Size	3.80 MB
Description	N-Channel Enhancement Mode MOSFET
Datasheet	HY3306P Datasheet
Additional preview pages of the HY3306P datasheet.

Product details

Description

DS G TO-220FB-3L DS G TO-263-2L Applications Switching application Power Management for Inverter Systems.

Features

60V/130A RDS(ON) = 5.4 mΩ (typ. ) @ VGS=10V.
100% avalanche tested.
Reliable and Rugged.
Lead Free and Green Devices Available (RoHS Compliant) Pin.

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Published: May 16, 2016 |