• Part: HY3306P
  • Description: N-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: HOOYI
  • Size: 3.80 MB
Download HY3306P Datasheet PDF
HOOYI
HY3306P
Features - 60V/130A RDS(ON) = 5.4 mΩ (typ.) @ VGS=10V - 100% avalanche tested - Reliable and Rugged - Lead Free and Green Devices Available (Ro HS pliant) Pin Description DS G TO-220FB-3L DS G TO-263-2L Applications - Switching application - Power Management for Inverter Systems. G N-Channel MOSFET Ordering and Marking Information PB HY3306 HY3306 YYÿ XXXJWW G YYÿ XXXJWW G Package Code P : TO-220FB-3L Date Code YYXXX WW B: TO-263-2L Assembly Material G : Lead Free Device Note: HOOYI lead-free products contain molding pounds/die attach materials and 100% matte tin plate termination finish; which are fully pliant with Ro HS. HOOYI lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. HOOYI defines “Green” to mean lead-free (Ro HS pliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HOOYI...