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HY3403B - N-Channel Enhancement Mode MOSFET

Download the HY3403B datasheet PDF. This datasheet also covers the HY3403P variant, as both devices belong to the same n-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

z 30V/140A RDS(ON)=2.2mΩ(typ.)@VGS = 10V RDS(ON)=2.7mΩ(typ.) @VGS = 4.5V z 100% avalanche tested z Excellent CdV/dt effect decline z Lead- Free Device Available Applications z Switching Application z Power Management for DC/DC N-Channel Enhancement Mode MOSFET Pin Description GDS GDS TO-220FB-3L

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HY3403P-HOOYI.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HY3403B
Manufacturer HOOYI
File Size 693.24 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HY3403B Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HY3403P/B Feature Description z 30V/140A RDS(ON)=2.2mΩ(typ.)@VGS = 10V RDS(ON)=2.7mΩ(typ.) @VGS = 4.5V z 100% avalanche tested z Excellent CdV/dt effect decline z Lead- Free Device Available Applications z Switching Application z Power Management for DC/DC N-Channel Enhancement Mode MOSFET Pin Description GDS GDS TO-220FB-3L TO-263-2L N-Channel MOSFET Ordering and Marking Information P HY3403 YYXXXJWW G B HY3403 YYXXXJWW G Package Code P: TO-220FB-3L B: TO-263-2L Date Code YYXXX WW Assembly Material G:lead Free Note: H8$<, lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS.