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HY3403P - N-Channel Enhancement Mode MOSFET

General Description

z 30V/140A RDS(ON)=2.2mΩ(typ.)@VGS = 10V RDS(ON)=2.7mΩ(typ.) @VGS = 4.5V z 100% avalanche tested z Excellent CdV/dt effect decline z Lead- Free Device Available Applications z Switching Application z Power Management for DC/DC N-Channel Enhancement Mode MOSFET Pin Description GDS GDS TO-220FB-3L

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Datasheet Details

Part number HY3403P
Manufacturer HOOYI
File Size 693.24 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HY3403P Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HY3403P/B Feature Description z 30V/140A RDS(ON)=2.2mΩ(typ.)@VGS = 10V RDS(ON)=2.7mΩ(typ.) @VGS = 4.5V z 100% avalanche tested z Excellent CdV/dt effect decline z Lead- Free Device Available Applications z Switching Application z Power Management for DC/DC N-Channel Enhancement Mode MOSFET Pin Description GDS GDS TO-220FB-3L TO-263-2L N-Channel MOSFET Ordering and Marking Information P HY3403 YYXXXJWW G B HY3403 YYXXXJWW G Package Code P: TO-220FB-3L B: TO-263-2L Date Code YYXXX WW Assembly Material G:lead Free Note: H8$<, lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS.