HY3410B - N-Channel Enhancement Mode MOSFET

HOOYI

Download the HY3410B datasheet PDF. This datasheet also covers the HY3410P variant, as both devices belong to the same n-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

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HY3410B n-channel enhancement mode mosfet by HOOYI - Datasheet Preview — Note: The manufacturer provides a single datasheet file (HY3410P-HOOYI.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	HY3410B
Manufacturer	HOOYI
File Size	1.02 MB
Description	N-Channel Enhancement Mode MOSFET
Datasheet	HY3410B Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
HY3410NA2P	N-Channel Enhancement Mode MOSFET	HUAYI
HY3410P	N-Channel 100V MOSFET	VBsemi
HY3403D	N-Channel Enhancement Mode MOSFET	HUAYI
HY3403U	N-Channel Enhancement Mode MOSFET	HUAYI
HY3403V	N-Channel Enhancement Mode MOSFET	HUAYI

Other Datasheets by HOOYI

Part Number	Description
HY3410M	N-Channel Enhancement Mode MOSFET
HY3410MF	N-Channel Enhancement Mode MOSFET
HY3410P	N-Channel Enhancement Mode MOSFET
HY3410PM	N-Channel Enhancement Mode MOSFET
HY3410PS	N-Channel Enhancement Mode MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HY3410P/M/B/PS/PM/MF Absolute Maximum Ratings Symbol Parameter Rating Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink TC=25°C 100 ±25 175 -55 to 175 140 IDM Pulsed Drain Current * ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Avalanche Ratings TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 550** 140 100 285 143 0.53 62.5 EAS Avalanche Energy, Single Pulsed L=0.