HY3410M - N-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the HY3410M, a member of the HY3410P N-Channel Enhancement Mode MOSFET family.

HOOYI

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Datasheet Details

Part number	HY3410M
Manufacturer	HOOYI
File Size	1.02 MB
Description	N-Channel Enhancement Mode MOSFET
Datasheet	HY3410M Datasheet
Additional preview pages of the HY3410M datasheet.

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Full PDF Text Transcription

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HY3410P/M/B/PS/PM/MF Absolute Maximum Ratings Symbol Parameter Rating Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink TC=25°C 100 ±25 175 -55 to 175 140 IDM Pulsed Drain Current * ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Avalanche Ratings TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 550** 140 100 285 143 0.53 62.5 EAS Avalanche Energy, Single Pulsed L=0.

Published: May 13, 2018 |