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HY3708P - N-Channel Enhancement Mode MOSFET

General Description

DS G TO-220FB-3L DS G TO-220FB-3M DS G TO-263-2L Applications

Power Management for Inverter Systems.

Key Features

  • 80V/170A RDS(ON) = 3.8 mΩ (typ. ) @ VGS=10V.
  • 100% avalanche tested.
  • Reliable and Rugged.
  • Lead Free and Green Devices Available (RoHS Compliant) Pin.

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Datasheet Details

Part number HY3708P
Manufacturer HOOYI
File Size 4.90 MB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HY3708P Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HY3708P/M/B/PS/PM N-Channel Enhancement Mode MOSFET Features • 80V/170A RDS(ON) = 3.8 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Pin Description DS G TO-220FB-3L DS G TO-220FB-3M DS G TO-263-2L Applications • Power Management for Inverter Systems.