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HY3708PM - N-Channel Enhancement Mode MOSFET

Download the HY3708PM datasheet PDF. This datasheet also covers the HY3708P variant, as both devices belong to the same n-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

DS G TO-220FB-3L DS G TO-220FB-3M DS G TO-263-2L Applications

Power Management for Inverter Systems.

Key Features

  • 80V/170A RDS(ON) = 3.8 mΩ (typ. ) @ VGS=10V.
  • 100% avalanche tested.
  • Reliable and Rugged.
  • Lead Free and Green Devices Available (RoHS Compliant) Pin.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HY3708P-HOOYI.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HY3708PM
Manufacturer HOOYI
File Size 4.90 MB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HY3708PM Datasheet

📁 Similar Datasheet

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HY3003V N-Channel Enhancement Mode MOSFET HUAYI
HY3008MF N-Channel Enhancement Mode MOSFET HUAYI

Other Datasheets by HOOYI

Part Number Description
HY3708P N-Channel Enhancement Mode MOSFET
HY3708PS N-Channel Enhancement Mode MOSFET
HY3708B N-Channel Enhancement Mode MOSFET
HY3708M N-Channel Enhancement Mode MOSFET
HY3704B N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HY3708P/M/B/PS/PM N-Channel Enhancement Mode MOSFET Features • 80V/170A RDS(ON) = 3.8 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Pin Description DS G TO-220FB-3L DS G TO-220FB-3M DS G TO-263-2L Applications • Power Management for Inverter Systems.