Datasheet4U Logo Datasheet4U.com

HY3810NA2W - N-Channel Enhancement Mode MOSFET

General Description

Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully compliant with RoHS.

📥 Download Datasheet

Datasheet Details

Part number HY3810NA2W
Manufacturer HOOYI
File Size 1.40 MB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HY3810NA2W Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HY3810NA2W N-Channel Enhancement Mode MOSFET Feature  100V/180A RDS(ON)=4.2mΩ (typ.) @ VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Halogen-Free and Green Devices Available (RoHS Compliant) Applications  Power Switching application  Uninterruptible Power Supply Pin Description TO-247A-3L Ordering and Marking Information W HY3810 XYMXXXXXX N-Channel MOSFET Package Code W :TO-247A-3L Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.