HY3810PS - N-Channel Enhancement Mode MOSFET

HOOYI

Download the HY3810PS datasheet PDF. This datasheet also covers the HY3810 variant, as both devices belong to the same n-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

DS G TO-220FB-3L DS G TO-220FB-3S G DS TO-263-2L Applications Switching application

Power Management for Inverter Systems.

Key Features

100V/180A RDS(ON) = 5.0 m(typ. ) @ VGS=10V.
100% avalanche tested.
Reliable and Rugged.
Lead Free and Green Devices Available (RoHS Compliant) N-Channel Enhancement Mode MOSFET Pin.

📥 Download Datasheet

HY3810PS n-channel enhancement mode mosfet by HOOYI - Datasheet Preview — Note: The manufacturer provides a single datasheet file (HY3810-HOOYI.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	HY3810PS
Manufacturer	HOOYI
File Size	939.05 KB
Description	N-Channel Enhancement Mode MOSFET
Datasheet	HY3810PS Datasheet

📁 Similar Datasheet

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HY3003V	N-Channel Enhancement Mode MOSFET	HUAYI
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Other Datasheets by HOOYI

Part Number	Description
HY3810P	N-Channel Enhancement Mode MOSFET
HY3810PM	N-Channel Enhancement Mode MOSFET
HY3810B	N-Channel Enhancement Mode MOSFET
HY3810M	N-Channel Enhancement Mode MOSFET
HY3810NA2W	N-Channel Enhancement Mode MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

HY3810P/M/B/PS/PM Features • 100V/180A RDS(ON) = 5.0 m(typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) N-Channel Enhancement Mode MOSFET Pin Description DS G TO-220FB-3L DS G TO-220FB-3S G DS TO-263-2L Applications  Switching application  Power Management for Inverter Systems.