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HYG023N04LS1B Datasheet N-channel Enhancement Mode MOSFET

Manufacturer: HOOYI

Overview: HYG023N04LS1P/B N-Channel Enhancement Mode MOSFET Feature  40V/170A RDS(ON)= 2.1 mΩ (typ.) @VGS = 10V RDS(ON)= 2.9 mΩ (typ.) @VGS = 4.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

TO-220FB-3L TO-263-2L N-Channel MOSFET Ordering and Marking Information P G023N04 XYMXXXXXX B G023N04 XYMXXXXXX Package Code P :TO-220FB-3L Date Code XYMXXXXXX B : TO-263-2L Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS.

HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.

HUAYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).

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