Datasheet Details
| Part number | HYG023N04LS1D |
|---|---|
| Manufacturer | HUAYI |
| File Size | 1.32 MB |
| Description | N-Channel Enhancement Mode MOSFET |
| Datasheet | HYG023N04LS1D-HUAYI.pdf |
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Overview: HYG023N04LS1D Single N-Channel Enhancement Mode MOSFET Feature 40V/120A RDS(ON)= 2.0 mΩ(typ.) @VGS = 10V RDS(ON)= 2.8 mΩ(typ.) @VGS = 4.
| Part number | HYG023N04LS1D |
|---|---|
| Manufacturer | HUAYI |
| File Size | 1.32 MB |
| Description | N-Channel Enhancement Mode MOSFET |
| Datasheet | HYG023N04LS1D-HUAYI.pdf |
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S GD Applications Power Management for DC/DC Ordering and Marking Information D G023N04 XYMXXXXXX Package Code D: TO-252-2L Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS.
HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.
HUAYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
HYG023N04LS1B | N-Channel Enhancement Mode MOSFET | HOOYI |
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HYG023N04LS1P | N-Channel Enhancement Mode MOSFET | HOOYI |
| Part Number | Description |
|---|---|
| HYG023N04LQ1B | N-Channel Enhancement Mode MOSFET |
| HYG023N04LQ1P | N-Channel Enhancement Mode MOSFET |
| HYG023N04NR1B | N-Channel Enhancement Mode MOSFET |
| HYG023N04NR1P | N-Channel Enhancement Mode MOSFET |
| HYG023N03LR1C2 | N-Channel MOSFET |
| HYG023N03LR1D | N-Channel Enhancement Mode MOSFET |
| HYG023N03LR1U | N-Channel Enhancement Mode MOSFET |
| HYG023N03LR1V | N-Channel Enhancement Mode MOSFET |
| HYG020N04NA1B | N-Channel Enhancement Mode MOSFET |
| HYG020N04NA1P | N-Channel Enhancement Mode MOSFET |