HYG023N04LS1P
HYG023N04LS1P is N-Channel Enhancement Mode MOSFET manufactured by HOOYI.
Feature
- 40V/170A RDS(ON)= 2.1 mΩ (typ.) @VGS = 10V RDS(ON)= 2.9 mΩ (typ.) @VGS = 4.5V
- 100% Avalanche Tested
- Reliable and Rugged
- Lead-Free and Green Devices Available
(Ro HS pliant)
Applications
- Power Management for DC/DC
Pin Description
TO-220FB-3L
TO-263-2L
N-Channel MOSFET
Ordering and Marking Information
G023N04
XYMXXXXXX
G023N04
XYMXXXXXX
Package Code P :TO-220FB-3L
Date Code XYMXXXXXX
B : TO-263-2L
Note: HUAYI lead-free products contain molding pounds/die attach materials and 100% matte tin plate Termi Nation finish;which are fully pliant with Ro HS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green” to mean lead-free (Ro HS pliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr -oduct and/or to this document at any time without notice.
.hymexa. 1
V1.0
HYG023N04LS1P/B
Absolute Maximum Ratings
Symbol
Parameter mon Ratings (Tc=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
Junction Temperature Range
TSTG
Storage Temperature Range
Source Current-Continuous(Body Diode)...
