HYG023N04NR1D datasheet by HOOYI.
| Part number | HYG023N04NR1D |
|---|---|
| Datasheet | HYG023N04NR1D-HOOYI.pdf |
| File Size | 1.38 MB |
| Manufacturer | HOOYI |
| Description | N-Channel Enhancement Mode MOSFET |
|
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S GD Applications Load Switch Battery Protection Single N-Channel MOSFET Ordering and Marking Information D G023N04 XYMXXXXXX Package Code D: TO-252-2L Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding pounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully pliant with RoHS.
View HYG023N04NR1B datasheet index
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
HYG023N04NR1B | N-Channel Enhancement Mode MOSFET | HUAYI |
|
HYG023N04NR1P | N-Channel Enhancement Mode MOSFET | HUAYI |
| Part Number | Description |
|---|---|
| HYG023N04LS1B | N-Channel Enhancement Mode MOSFET |
| HYG023N04LS1P | N-Channel Enhancement Mode MOSFET |
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