Datasheet4U Logo Datasheet4U.com

HYG023N04NR1D Datasheet N-channel Enhancement Mode MOSFET

Manufacturer: HOOYI

Overview: HYG023N04NR1D Single N-Channel Enhancement Mode MOSFET Feature  45V/140A RDS(ON)= 2.3 mΩ(typ.

Datasheet Details

Part number HYG023N04NR1D
Manufacturer HOOYI
File Size 1.38 MB
Description N-Channel Enhancement Mode MOSFET
Datasheet HYG023N04NR1D-HOOYI.pdf

General Description

S GD Applications  Load Switch  Battery Protection Single N-Channel MOSFET Ordering and Marking Information D G023N04 XYMXXXXXX Package Code D: TO-252-2L Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS.

HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.

HUAYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).

HYG023N04NR1D Distributor