• Part: HYG023N04NR1B
  • Description: N-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: HUAYI
  • Size: 1.26 MB
Download HYG023N04NR1B Datasheet PDF
HUAYI
HYG023N04NR1B
HYG023N04NR1B is N-Channel Enhancement Mode MOSFET manufactured by HUAYI.
- Part of the HYG023N04NR1P comparator family.
Feature - 45V/179A RDS(ON)= 2.2mΩ(typ.) @VGS = 10V - 100% Avalanche Tested - Reliable and Rugged - Lead-Free and Green Devices Available (Ro HS pliant) Applications - Switching application - Li-battery protection N-Channel Enhancement Mode MOSFET Pin Description TO-220FB-3L TO-263-2L N-Channel MOSFET Ordering and Marking Information G023N04 XYMXXXXXX G023N04 XYMXXXXXX Package Code P :TO-220FB-3L Date Code XYMXXXXXX B : TO-263-2L Note: HUAYI lead-free products contain molding pounds/die attach materials and 100% matte tin plate Termi Nation finish;which are fully pliant with Ro HS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green” to mean lead-free (Ro HS pliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr -oduct and/or to this document at any time without notice. .hymexa. 1 V1.1 HYG023N04NR1P/B Absolute Maximum Ratings Symbol Parameter mon Ratings (Tc=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage Junction Temperature Range TSTG Storage Temperature...