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HYG200P10LR1B - P-Channel Enhancement Mode MOSFET

Download the HYG200P10LR1B datasheet PDF. This datasheet also covers the HYG200P10LR1P variant, as both devices belong to the same p-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

TO-220FB-3L TO-263-2L Applications Portable equipment and battery powered systems DC-DC Converters Ordering and Marking Information P G200P10 XYMXXXXXX B G200P10 XYMXXXXXX P-Channel MOSFET Package Code P: TO-220FB-3L Date Code XYMXXXXXX B: TO-263-2L Note: HUAYI lead-free products

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HYG200P10LR1P-HOOYI.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HYG200P10LR1B
Manufacturer HOOYI
File Size 1.32 MB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet HYG200P10LR1B Datasheet

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Other Datasheets by HOOYI

Part Number Description
HYG200P10LR1P P-Channel Enhancement Mode MOSFET
HYG200N12NS1P N-Channel Enhancement Mode MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HYG200P10LR1P/B Feature  -100V/-80A RDS(ON)= 20 mΩ(typ.) @ VGS = -10V RDS(ON)= 24 mΩ(typ.) @ VGS = -4.5V  100% Avalanche Tested  Reliable and Rugged  Lead Free and Green Devices Available (RoHS Compliant) P-Channel Enhancement Mode MOSFET Pin Description TO-220FB-3L TO-263-2L Applications  Portable equipment and battery powered systems  DC-DC Converters Ordering and Marking Information P G200P10 XYMXXXXXX B G200P10 XYMXXXXXX P-Channel MOSFET Package Code P: TO-220FB-3L Date Code XYMXXXXXX B: TO-263-2L Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully compliant with RoHS.