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HYG200P10LR1P - P-Channel Enhancement Mode MOSFET

General Description

TO-220FB-3L TO-263-2L Applications Portable equipment and battery powered systems DC-DC Converters Ordering and Marking Information P G200P10 XYMXXXXXX B G200P10 XYMXXXXXX P-Channel MOSFET Package Code P: TO-220FB-3L Date Code XYMXXXXXX B: TO-263-2L Note: HUAYI lead-free products

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Datasheet Details

Part number HYG200P10LR1P
Manufacturer HOOYI
File Size 1.32 MB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet HYG200P10LR1P Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HYG200P10LR1P/B Feature  -100V/-80A RDS(ON)= 20 mΩ(typ.) @ VGS = -10V RDS(ON)= 24 mΩ(typ.) @ VGS = -4.5V  100% Avalanche Tested  Reliable and Rugged  Lead Free and Green Devices Available (RoHS Compliant) P-Channel Enhancement Mode MOSFET Pin Description TO-220FB-3L TO-263-2L Applications  Portable equipment and battery powered systems  DC-DC Converters Ordering and Marking Information P G200P10 XYMXXXXXX B G200P10 XYMXXXXXX P-Channel MOSFET Package Code P: TO-220FB-3L Date Code XYMXXXXXX B: TO-263-2L Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully compliant with RoHS.