HT3401 Datasheet PDF

HOTCHIP HT3401

The HT3401 uses advanced trench technology to Provide excellent RDS(ON),low gate change and Operation with gate voltages as low as 2.5V.This Device is suitable for use as a load switch or in PWM applications. Standard product HT3401 is Pb-free (meets ROHS & Sony 259 specifications).

Part No.	HT3401
Datasheet	HT3401 Download
Manufacturer	HOTCHIP
Description	P-Channel Enhancement Mode Field Effect Transistor
Buy	Stock & Price

GENERAL DESCRIPTION

FEATURES

VDS(V)=-30V ID=-4.2A(VGS=-10V) RDS(ON)<50mΩ(VGS=-10V) RDS(ON)<65mΩ(VGS=-4.5V) RDS(ON)<120mΩ(VGS=-2.5V)

ABSOLUTE MAXIMUM RATINGS

(TA=25°C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain TA=25°C Current (A) TA=70°C Junction and Storage Temperature Range Power Dissipation TA=25°C (A) TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum junction-to-Ambient(A) Maximum junction-to-Ambient(A) Maximum junction-to-Lead(C) t≤ 10s Steady-State Steady-State Symbol VDS VGS ID IDM PD TJ,TSTG Symbol RθJA RθJL Typ 65 85 43 Maximum -30 +12 -4.2 -3.5 -3.0 1.4 1 -55 to 150 Max 90 125 60 Units V V A W ℃ Units °C/W °C/W °C/W Ver1.0 HT3401

ELECTRICAL CHARACTERISTICS

(TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Voltage Breakdown ID=-250µA, VGS=0V IDSS Zero Gate Voltage Drain VDS=-24V,VGS=0V Current TJ=55℃ -30 IGSS Gate-Body leakage current VDS=0...