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REPLACEMENT TYPE : MMBTA56
FEATURES
General Purpose Amplifier Applications
HABTA56(PNP)
GENERAL PURPOSE TRANSISTOR
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Parameter
Symbol Value
Collector-Base Voltage
VCBO
-80
Collector-Emitter Voltage
VCEO
-80
Emitter-Base Voltage
VEBO
-4
Collector Current-Continuous IC -500
Collector Power Dissipation
PC 225
Thermal Resistance Junction to Ambient RθJA
555
Junction Temperature
TJ 150
Storage Temperature
Tstg -55~+150
Unit
V V V mA mW °C/W °C °C
SOT-23 MARKING:2GM 1: BASE 2:EMITTER 3: COLLECTOR
ELECTRICAL CHARACTERISTICS (TA= 25°C unless otherwise noted)
Parameter
Symbol Test conditions
Min Typ Max Unit
Collector-Base Breakdown Voltage
VCBO
IC=-100μA,IE=0
-80
V
Collector-Emitter Breakdown Voltage
VCEO
IC=-1m