High power gain
KTC3879 (NPN)
Maximum Ratings (Ta=25
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power dissipation Junction Temperature Storage Temperature
unless otherwise noted)
Symbol
Value
VCBO
35
VCEO
30
VEBO
4
IC 50
PC 0.15
TJ 150
Tstg -55to +150
Unit
V V V mA W
1. BASE 2.
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Plastic-Encapsulate Transistors
FEATURES
• High power gain
KTC3879 (NPN)
Maximum Ratings (Ta=25
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power dissipation Junction Temperature Storage Temperature
unless otherwise noted)
Symbol
Value
VCBO
35
VCEO
30
VEBO
4
IC 50
PC 0.15
TJ 150
Tstg -55to +150
Unit
V V V mA W
1. BASE 2. EMITTER 3.