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REPLACEMENT TYPE : MMBT2222
FEATURES Genernal Purpose Amplifier
HABT2222(NPN)
SWITCHING TRANSISTOR
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Collector-Base Voltage
VCBO
75 V
Collector-Emitter Voltage
VCEO
30 V
Emitter-Base Voltage
VEBO
6V
Collector Current-Continuous IC 600 mA
Collector Power Dissipation
PC
Thermal Resistance Junction to Ambient RθJA
250 mW 500 °C /W
Junction Temperature
TJ 150 °C
Storage Temperature
Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (TA= 25°C unless otherwise noted)
Parameter
Symbol Test conditions
Collector-Base Breakdown Voltage
VCBO
IC=10μA,IE=0
Collector-Emitter Breakdown Voltage
VCEO
IC=10mA,IB=0
Emitter-Base Breakdown Voltage
VEBO
IE=10uA,IC=0
Collector Cut-off Current
ICBO VCB=6
MMBT2222 Datasheet
