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REPLACEMENT TYPE : MMBT2907A
FEATURES
Epitaxial Planar Die Construction
Complementary NPN Type Available(HABT2222A)
HABT2907A(PNP)
SWITCHING TRANSISTOR
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Parameter
Symbol Value
Collector-Base Voltage
VCBO
-60
Collector-Emitter Voltage
VCEO
-60
Emitter-Base Voltage
VEBO
-5
Collector Current-Continuous IC -600
Total Device Dissipation
PC 250
Thermal Resistance Junction to Ambient RθJA
500
Junction Temperature
TJ 150
Storage Temperature
Tstg -55 to +150
Unit
V V V mA mW °C /W °C °C
SOT-23 MARKING:2F 1: BASE 2:EMITTER 3: COLLECTOR
ELECTRICAL CHARACTERISTICS (TA= 25°C unless otherwise noted)
Parameter
Symbol Test conditions
Min Typ Max Unit
Collector-Base Breakdown Voltage
VCBO
IC=-10μA,IE=0
-60
V
Collector-E
MMBT2907A Datasheet
