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AT-36408 - 4.8V NPN Common Emitter Output Power Transistor

General Description

Hewlett Packard’s AT-36408 combines internal input prematching with low cost, NPN power silicon bipolar junction transistors in a SOIC-8 surface mount plastic package.

This device is designed for use as the output device for GSM Class IV handsets.

Key Features

  • 4.8 Volt Pulsed Operation (pulse width = 577 µsec, duty cycle = 12.5%).
  • +35.0 dBm Pout @ 900 MHz, Typ.
  • 65% Collector Efficiency @␣ 900 MHz, Typ.
  • 9 dB Power Gain @ 900 MHz, Typ.
  • Internal Input Pre-Matching Facilitates Cascading.

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Datasheet Details

Part number AT-36408
Manufacturer HP
File Size 92.87 KB
Description 4.8V NPN Common Emitter Output Power Transistor
Datasheet download datasheet AT-36408 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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4.8 V NPN Common Emitter Output Power Transistor for␣ GSM Class IV Phones Technical Data AT-36408 Features • 4.8 Volt Pulsed Operation (pulse width = 577 µsec, duty cycle = 12.5%) • +35.0 dBm Pout @ 900 MHz, Typ. • 65% Collector Efficiency @␣ 900 MHz, Typ. • 9 dB Power Gain @ 900 MHz, Typ. • Internal Input Pre-Matching Facilitates Cascading Applications • Output Power Device for GSM Class IV Handsets SOIC-8 Surface Mount Plastic Package Outline P8 Pin Configuration BASE 1 EMITTER 2 COLLECTOR 3 EMITTER 4 8 BASE 7 EMITTER 6 COLLECTOR 5 EMITTER Description Hewlett Packard’s AT-36408 combines internal input prematching with low cost, NPN power silicon bipolar junction transistors in a SOIC-8 surface mount plastic package.