Hewlett-Packard MSA-0335
The MSA-0335 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a cost effective, microstrip package. This MMIC is Typical Biasing Configuration R bias VCC > 7 V RFC (Optional) 4 C block 3 IN 1 MSA C block OUT Vd = 5 V 2 5965-9568E 6-302 MSA-0335, -0336 Absolute Maximum Ratings Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature[4] Absolute Maximum[1] 80 mA 425 mW +13 dBm 200°C –65 to 200°C Thermal Resistance[2,5]: θjc = 150°C/W Notes: 1.| Part No. | MSA-0335 |
|---|---|
| Datasheet | MSA-0335 Download |
| Manufacturer |  Hewlett-Packard |
| Description | Cascadable Silicon Bipolar MMIC Amplifier |
| Buy | Stock & Price |
FEATURES
● Cascadable 50 Ω Gain Block● 3 dB Bandwidth: DC to 2.7 GHz
● 12.0 dB Typical Gain at 1.0␣ GHz
● 10.0 dBm Typical P1 dB at 1.0␣ GHz
● Unconditionally Stable (k>1)
● Cost Effective Ceramic Microstrip Package designed for use as a general purpose 50 Ω gain block. Typical applications include narrow and broad band IF and RF amplifiers in industrial and military applications. The MSA-series is fabricated using HP’s 10 GHz fT, 25␣ GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. Available in cut lead version (package 36) as MSA-0336. 35 micro-X Package[1] Note: 1. Short leaded 36 package available upon request.
DESCRIPTION
Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C. 3. Derate at 6.7 mW/°C for TC > 136°C. 4. Storage above +150°C may tarnish the leads of this package making it difficult to solder into a circuit.
