Hewlett-Packard MSA-0336
The MSA-series is fabricated using HP’s 10 GHz fT, 25␣ GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.| Part No. | MSA-0336 |
|---|---|
| Datasheet | MSA-0336 Download |
| Manufacturer |  Hewlett-Packard |
| Description | Cascadable Silicon Bipolar MMIC Amplifier |
| Buy | Stock & Price |
FEATURES
● Cascadable 50 Ω Gain Block● 3 dB Bandwidth: DC to 2.7 GHz
● 12.0 dB Typical Gain at 1.0␣ GHz
● 10.0 dBm Typical P1 dB at 1.0␣ GHz
● Unconditionally Stable (k>1)
● Cost Effective Ceramic Microstrip Package designed for use as a general purpose 50 Ω gain block. Typical applications include narrow and broad band IF and RF amplifiers in industrial and military applications. Available in cut lead version (package 36) as MSA-0336. 35 micro-X Package[1] Note: 1. Short leaded 36 package available upon request.
DESCRIPTION
The MSA-0335 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a cost effective, microstrip package. This MMIC is Typical Biasing Configuration R bias VCC > 7 V RFC (Optional) 4 C block 3 IN 1 MSA C block OUT Vd = 5 V 2 5965-9568E 6-302 MSA-0335, -0336ABSOLUTE MAXIMUM RATINGS
Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature[4] Absolute Maximum[1] 80 mA 425 mW +13 dBm 200°C –65 to 200°C Thermal Resistance[2,5]: θjc = 150°C/W Notes: 1.
