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CS10J60FA9 - Silicon N-Channel Power MOSFET

General Description

CS10J60F A9, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy.

Key Features

  • l Fast Switching l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test.

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Datasheet Details

Part number CS10J60FA9
Manufacturer HUAJING MICROELECTRONICS
File Size 407.50 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS10J60FA9 Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silicon N-Channel Power MOSFET CS10J60F A9 ○R General Description： CS10J60F A9, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package type is TO-220F, which accords with the RoHS standard. VDSS ID PD(TC=25℃) RDS(ON)max Features： l Fast Switching l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： 600 V 10 A 25 W 0.