HFF11N60S Datasheet | HUASHAN ELECTRONIC

Shantou Huashan Electronic Devices Co., Ltd. N-Channel Enhancement Mode Field Effect Transistor - General Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode . These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge. - Features - 10.8A, 600V(See Note), RDS(on) <0.75Ω@VGS = 10 V - Fast switching - 100% avalanche...