HFF11N60S Description
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode . These devices are well suited for high efficiency switch mode power supply, power factor...
HFF11N60S Key Features
- 10.8A, 600V(See Note), RDS(on) <0.75Ω@VGS = 10 V
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- RoHS pliant
- Maximum Ratings（Ta=25℃ unless otherwise specified）