Datasheet Details
| Part number | HFF11N60S |
|---|---|
| Manufacturer | HUASHAN ELECTRONIC |
| File Size | 707.52 KB |
| Description | N-Channel MOSFET |
| Datasheet | HFF11N60S-HUASHANELECTRONIC.pdf |
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Overview: Shantou Huashan Electronic Devices Co., Ltd. HFF11N60S N-Channel Enhancement Mode Field Effect Transistor █.
| Part number | HFF11N60S |
|---|---|
| Manufacturer | HUASHAN ELECTRONIC |
| File Size | 707.52 KB |
| Description | N-Channel MOSFET |
| Datasheet | HFF11N60S-HUASHANELECTRONIC.pdf |
|
|
|
These are N-Channel enhancement mode silicon gate power field effect transistors.
They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode .
These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge.
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