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HFP4N65 Datasheet N-channel Enhancement Mode Field Effect Transistor

Manufacturer: HUASHAN ELECTRONIC

Overview: Shantou Huashan Electronic Devices Co., Ltd. HFP4N65 N-Channel Enhancement Mode Field Effect Transistor █.

Datasheet Details

Part number HFP4N65
Manufacturer HUASHAN ELECTRONIC
File Size 814.75 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet HFP4N65-HUASHANELECTRONIC.pdf

General Description

These are N-Channel enhancement mode silicon gate power field effect transistors.

They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode .

These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge.

Key Features

  • s.
  • 4A, 650V(See Note), RDS(on).

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