Datasheet Summary
Shantou Huashan Electronic Devices Co., Ltd.
N-Channel Enhancement Mode Field Effect Transistor
- General Description
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode . These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge.
- Features
- 4A, 650V(See Note), RDS(on) <2.9Ω@VGS = 10 V
- Fast switching
- 100% avalanche tested
-...
