Datasheet Summary
April 2006
650V N-Channel MOSFET
BVDSS = 650 V RDS(on) typ = 2.3 Ω ID = 3.6 A
Features
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 15 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 2.3 Ω (Typ.) @VGS=10V 100% Avalanche Tested
TO-220
1 2 3
1.Gate 2. Drain 3. Source...
