HSU3119 Datasheet | HUASHUO

Description The HSU3119 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The HSU3119 meet the Ro HS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. Product Summary VDS RDS(ON),Max ID -30 V 3.0 mΩ -130 A - Super Low Gate Charge - 100% EAS Guaranteed - Green Device Available - Excellent Cd V/dt effect decline - Advanced high cell density Trench technology TO-252 Pin Configuration Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM EAS IAS PD@TC=25℃ TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ -10V1,6 Continuous Drain Current, VGS @ -10V1,6 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol RθJA RθJC Parameter Thermal Resistance Junction-ambient 1(t≦10S) Thermal Resistance Junction-ambient 1(Steady State) Thermal Resistance Junction-case 1 Rating -30 ±20 -130 -81 -510 1050 -75 135 -55 to 150 -55 to 150 Units V V A A A m J A W ℃ ℃ Typ. ------- Max. 20 60 1.8 Unit ℃/W ℃/W ℃/W .hs-semi.cn Ver 2.0 P-Ch 30V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 VGS(th) Gate Threshold Voltage IDSS Drain-Source Leakage Current IGSS Rg Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss...