HSX044N25 Datasheet | HUASHUO

Description The HSX044N25 is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The HSX044N25 meet the Ro HS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. - Super Low Gate Charge - Green Device Available - Excellent Cdv/dt effect decline - Advanced high cell density Trench technology N-Ch 250V Fast Switching MOSFETs Product Summary VDS RDS(ON),max ID 250 V 44 mΩ 55 A TO-247 Pin Configuration Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM EAS PD@TC=25℃ TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Total Power Dissipation3 Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol RθJA RθJC Parameter Thermal Resistance Junction-ambient 1 Thermal Resistance Junction-Case1 Rating 250 ±20 55 35 195 165 350 -55 to 175 -55 to 175 Units V V A A A m J W ℃ ℃ Typ. ----- Max. 45 0.4 Unit ℃/W ℃/W .hs-semi.cn Ver 2.0 N-Ch 250V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS RDS(ON) VGS(th) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Gate Threshold Voltage IDSS Drain-Source Leakage Current IGSS gfs Rg Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Gate-Source Leakage Current Forward Transconductance Gate Resistance Total Gate Charge (10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Conditions VGS=0V , ID=250u A VGS=10V , ID=5A VGS=VDS , ID =250u A VDS=150V , VGS=0V , TJ=25℃ VDS=150V , VGS=0V , TJ=125℃ VGS=±20V , VDS=0V VDS=10V , ID=20A VDS=0V , VGS=0V , f=1MHz VDS=50V , VGS=10V ,...