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HY3210NA2B - N-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the HY3210NA2B, a member of the HY3210NA2P N-Channel Enhancement Mode MOSFET family.

Datasheet Summary

Description

TO-220FB-3L TO-263-2L Ordering and Marking Information P HY3210 XYMXXXXXX B HY3210 XYMXXXXXX N-Channel MOSFET Package Code P :TO-220FB-3L Date Code XYMXXXXXX B :TO-263-2L Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish

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Datasheet preview – HY3210NA2B

Datasheet Details

Part number HY3210NA2B
Manufacturer HUAYI
File Size 1.41 MB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HY3210NA2B Datasheet
Additional preview pages of the HY3210NA2B datasheet.

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Full PDF Text Transcription

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HY3210NA2P/B Feature  100V/120A RDS(ON)=6.7mΩ (typ.) @ VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Lead-Free and Green Devices Available (RoHS Compliant) Applications  Power Switching application  Uninterruptible Power Supply  Motor Control N-Channel Enhancement Mode MOSFET Pin Description TO-220FB-3L TO-263-2L Ordering and Marking Information P HY3210 XYMXXXXXX B HY3210 XYMXXXXXX N-Channel MOSFET Package Code P :TO-220FB-3L Date Code XYMXXXXXX B :TO-263-2L Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.
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