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HY3210NA2P Datasheet N-channel Enhancement Mode MOSFET

Manufacturer: HUAYI

Overview: HY3210NA2P/B Feature  100V/120A RDS(ON)=6.7mΩ (typ.) @ VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Lead-Free and Green Devices Available (RoHS pliant) Applications  Power Switching application .

Datasheet Details

Part number HY3210NA2P
Manufacturer HUAYI
File Size 1.41 MB
Description N-Channel Enhancement Mode MOSFET
Datasheet HY3210NA2P-HUAYI.pdf

General Description

TO-220FB-3L TO-263-2L Ordering and Marking Information P HY3210 XYMXXXXXX B HY3210 XYMXXXXXX N-Channel MOSFET Package Code P :TO-220FB-3L Date Code XYMXXXXXX B :TO-263-2L Note: HUAYI lead-free products contain molding pounds/die attach materials and 100% matte tin plateTermiNation finish;

which are fully pliant with RoHS.

HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.

HY3210NA2P Distributor