• Part: HYG024N03LR1B
  • Description: N-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: HUAYI
  • Size: 899.50 KB
Download HYG024N03LR1B Datasheet PDF
HUAYI
HYG024N03LR1B
Feature - 30V/160A RDS(ON)=2.1mΩ(typ.)@VGS = 10V RDS(ON)=2.7mΩ(typ.)@VGS = 4.5V - 100% Avalanche Tested - Reliable and Rugged - Lead-Free and Green Devices Available (Ro HS pliant) N-Channel Enhancement Mode MOSFET Pin Description TO-220FB-3L TO-263-2L Applications - Switching application - Power management for inverter systems Ordering and Marking Information N-Channel MOSFET G024N03 XYMXXXXXX G024N03 XYMXXXXXX Package Code P:TO-220FB-3L Date Code XYMXXXXXX B : TO-263-2L Note: HUAYI lead-free products contain molding pounds/die attach materials and 100% matte tin plate Termi Nation finish;which are fully pliant with Ro HS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green” to mean lead-free (Ro HS pliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by...