Datasheet Details
Part number
HYG024N03LR1C2
Manufacturer
HUAYI
File Size
886.23 KB
Description
N-Channel Enhancement Mode MOSFET
Datasheet
Full PDF Text Transcription for HYG024N03LR1C2 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
HYG024N03LR1C2 . For precise diagrams, and layout, please refer to the original PDF.
HYG024N03LR1C2 Single N-Channel Enhancement Mode MOSFET Feature 30V/140A RDS(ON)= 1.6mΩ (typ.) @ VGS = 10V RDS(ON)= 2.3mΩ (typ.) @ VGS = 4.5V 100% Avalanche Tested ...
View more extracted text
GS = 10V RDS(ON)= 2.3mΩ (typ.) @ VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available (RoHS Compliant) Pin Description DDDD DDDD SSSG GSSS Pin1 PDFN5*6-8L Applications Battery Protection Power Tool Application Ordering and Marking Information Single N-Channel MOSFET C2 G024N03 XYMXXXXXX Package Code C2: PDFN5*6-8L Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully compliant with RoHS.
More Datasheets from HUAYI
HYG024N03LR1C2 Datasheet
