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HYG030N03LQ1B - N-Channel Enhancement Mode MOSFET

Download the HYG030N03LQ1B datasheet PDF. This datasheet also covers the HYG030N03LQ1P variant, as both devices belong to the same n-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

TO-220FB-3L TO-263-2L Ordering and Marking Information N-Channel MOSFET P P G030N03 XYMXXXXXX B G030N03 XYMXXXXXX Package Code P:TO-220FB-3L Date Code XYMXXXXXX B : TO-263-2L Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNatio

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Note: The manufacturer provides a single datasheet file (HYG030N03LQ1P-HUAYI.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HYG030N03LQ1B
Manufacturer HUAYI
File Size 897.14 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HYG030N03LQ1B Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HYG030N03LQ1P/B Feature  30V/100A RDS(ON)=2.8mΩ(typ.)@VGS = 10V RDS(ON)=3.8mΩ(typ.)@VGS = 4.5V  100% Avalanche Tested  Reliable and Rugged  Lead-Free and Green DevicesAvailable (RoHS Compliant) Applications  Switching application  Battery protection N-Channel Enhancement Mode MOSFET Pin Description TO-220FB-3L TO-263-2L Ordering and Marking Information N-Channel MOSFET P P G030N03 XYMXXXXXX B G030N03 XYMXXXXXX Package Code P:TO-220FB-3L Date Code XYMXXXXXX B : TO-263-2L Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS.