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HYG030N03LQ1B Datasheet N-channel Enhancement Mode MOSFET

Manufacturer: HUAYI

Overview: HYG030N03LQ1P/B Feature  30V/100A RDS(ON)=2.8mΩ(typ.)@VGS = 10V RDS(ON)=3.8mΩ(typ.)@VGS = 4.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

TO-220FB-3L TO-263-2L Ordering and Marking Information N-Channel MOSFET P P G030N03 XYMXXXXXX B G030N03 XYMXXXXXX Package Code P:TO-220FB-3L Date Code XYMXXXXXX B : TO-263-2L Note: HUAYI lead-free products contain molding pounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully pliant with RoHS.

HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.

HUAYI defines “Green” to mean lead-free (RoHS pliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).

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