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HYG030N03LQ1P - N-Channel Enhancement Mode MOSFET

General Description

TO-220FB-3L TO-263-2L Ordering and Marking Information N-Channel MOSFET P P G030N03 XYMXXXXXX B G030N03 XYMXXXXXX Package Code P:TO-220FB-3L Date Code XYMXXXXXX B : TO-263-2L Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNatio

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Datasheet Details

Part number HYG030N03LQ1P
Manufacturer HUAYI
File Size 897.14 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HYG030N03LQ1P Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HYG030N03LQ1P/B Feature  30V/100A RDS(ON)=2.8mΩ(typ.)@VGS = 10V RDS(ON)=3.8mΩ(typ.)@VGS = 4.5V  100% Avalanche Tested  Reliable and Rugged  Lead-Free and Green DevicesAvailable (RoHS Compliant) Applications  Switching application  Battery protection N-Channel Enhancement Mode MOSFET Pin Description TO-220FB-3L TO-263-2L Ordering and Marking Information N-Channel MOSFET P P G030N03 XYMXXXXXX B G030N03 XYMXXXXXX Package Code P:TO-220FB-3L Date Code XYMXXXXXX B : TO-263-2L Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS.