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HYG032N08NS1B - N-Channel Enhancement Mode MOSFET

Download the HYG032N08NS1B datasheet PDF. This datasheet also covers the HYG032N08NS1P variant, as both devices belong to the same n-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

DS G TO-220FB-3L G DS TO-263-2L Applications Switching application Power management for inverter systems Motor control N-Channel MOSFET Ordering and Marking Information P G032N08 XYMXXXXXX B G032N08 XYMXXXXXX Package Code P :TO-220FB-3L Date Code XYMXXXXXX B : TO-263-2L N

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Note: The manufacturer provides a single datasheet file (HYG032N08NS1P-HUAYI.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HYG032N08NS1B
Manufacturer HUAYI
File Size 754.10 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HYG032N08NS1B Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HYG032N08NS1P/B Feature  80V/180A RDS(ON)=3 mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Lead-Free and Green DevicesAvailable (RoHS Compliant) N-Channel Enhancement Mode MOSFET Pin Description DS G TO-220FB-3L G DS TO-263-2L Applications  Switching application  Power management for inverter systems  Motor control N-Channel MOSFET Ordering and Marking Information P G032N08 XYMXXXXXX B G032N08 XYMXXXXXX Package Code P :TO-220FB-3L Date Code XYMXXXXXX B : TO-263-2L Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS.