Datasheet4U Logo Datasheet4U.com

HYG032N08NS1B Datasheet N-channel Enhancement Mode MOSFET

Manufacturer: HUAYI

Overview: HYG032N08NS1P/B Feature  80V/180A RDS(ON)=3 mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Lead-Free and Green DevicesAvailable (RoHS pliant) N-Channel Enhancement Mode MOSFET.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

DS G TO-220FB-3L G DS TO-263-2L Applications  Switching application  Power management for inverter systems  Motor control N-Channel MOSFET Ordering and Marking Information P G032N08 XYMXXXXXX B G032N08 XYMXXXXXX Package Code P :TO-220FB-3L Date Code XYMXXXXXX B : TO-263-2L Note: HUAYI lead-free products contain molding pounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully pliant with RoHS.

HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.

HUAYI defines “Green” to mean lead-free (RoHS pliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).

More Datasheets from HUAYI

Part Number Description
HYG032N08NS1B6 N-Channel Enhancement Mode MOSFET
HYG032N08NS1P N-Channel Enhancement Mode MOSFET
HYG030N03LQ1B N-Channel Enhancement Mode MOSFET
HYG030N03LQ1D N-Channel Enhancement Mode MOSFET
HYG030N03LQ1P N-Channel Enhancement Mode MOSFET
HYG035N04LR1D N-Channel Enhancement Mode MOSFET
HYG035N08NS2C2 N-Channel Enhancement Mode MOSFET
HYG035N10NS1B N-Channel Enhancement Mode MOSFET
HYG035N10NS1P N-Channel Enhancement Mode MOSFET
HYG035N10NS2B N-Channel Enhancement Mode MOSFET

HYG032N08NS1B Distributor