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HYG032N08NS1B6 - N-Channel Enhancement Mode MOSFET

General Description

Pin 1 TO-263-6L Pin 7 Applications Motor control Power management for inverter systems Battery Operated Tools Pin 1 Pin 2,3,5,6,7 Single N-Channel MOSFET Ordering and Marking Information B6 G032N08 XYMXXXXXX Package Code B6:TO-263-6L Date Code XYMXXXXXX Note: HUAYI lead-free

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Datasheet Details

Part number HYG032N08NS1B6
Manufacturer HUAYI
File Size 794.95 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HYG032N08NS1B6 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HYG032N08NS1B6 N-Channel Enhancement Mode MOSFET Feature  80V/200A RDS(ON)=2.5 mΩ(typ.)@VGS=10V  100% Avalanche Tested  Reliable and Rugged  Halogen-Free and Green Devices Available (RoHS Compliant) Pin Description Pin 1 TO-263-6L Pin 7 Applications  Motor control  Power management for inverter systems  Battery Operated Tools Pin 1 Pin 2,3,5,6,7 Single N-Channel MOSFET Ordering and Marking Information B6 G032N08 XYMXXXXXX Package Code B6:TO-263-6L Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.