Datasheet Details
| Part number | HYG032N08NS1B6 |
|---|---|
| Manufacturer | HUAYI |
| File Size | 794.95 KB |
| Description | N-Channel Enhancement Mode MOSFET |
| Datasheet | HYG032N08NS1B6-HUAYI.pdf |
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Overview: HYG032N08NS1B6 N-Channel Enhancement Mode MOSFET Feature 80V/200A RDS(ON)=2.5 mΩ(typ.
| Part number | HYG032N08NS1B6 |
|---|---|
| Manufacturer | HUAYI |
| File Size | 794.95 KB |
| Description | N-Channel Enhancement Mode MOSFET |
| Datasheet | HYG032N08NS1B6-HUAYI.pdf |
|
|
|
Pin 1 TO-263-6L Pin 7 Applications Motor control Power management for inverter systems Battery Operated Tools Pin 1 Pin 2,3,5,6,7 Single N-Channel MOSFET Ordering and Marking Information B6 G032N08 XYMXXXXXX Package Code B6:TO-263-6L Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding pounds/die attach materials and 100% matte tin plateTermiNation finish;
which are fully pliant with RoHS.
HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.
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